PART |
Description |
Maker |
2SD965 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
2SD1119 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CD4049UBC CD4049UBCM CD4049UBCN CD4050 CD4050BCM C |
Hex Inverting Buffer . Hex Non-Inverting Buffer 六角反相缓冲。六角非反相缓冲 Hex Inverting Buffer . Hex Non-Inverting Buffer 4000/14000/40000 SERIES, HEX 1-INPUT NON-INVERT GATE, PDSO16
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41 |
2M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|